GT700P08K Goford Semiconductor
Hersteller: Goford Semiconductor
Description: P-80V,-20A,RD(MAX)<72M@-10V,VTH-
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 2A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1615 pF @ 40 V
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.4 EUR |
| 14+ | 1.51 EUR |
| 100+ | 1 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.7 EUR |
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Technische Details GT700P08K Goford Semiconductor
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; SGT; unipolar; -80V; -20A; 125W; TO252, Case: TO252, Mounting: SMD, Power dissipation: 125W, Gate charge: 75nC, Polarisation: unipolar, Technology: SGT, Drain current: -20A, Kind of channel: enhancement, Drain-source voltage: -80V, Type of transistor: P-MOSFET, Gate-source voltage: ±20V.
Weitere Produktangebote GT700P08K
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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GT700P08K | Goford Semiconductor |
Description: P-80V,-20A,RD(MAX)<72M@-10V,VTH- Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 2A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1615 pF @ 40 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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GT700P08K | GOFORD SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; SGT; unipolar; -80V; -20A; 125W; TO252 Case: TO252 Mounting: SMD Power dissipation: 125W Gate charge: 75nC Polarisation: unipolar Technology: SGT Drain current: -20A Kind of channel: enhancement Drain-source voltage: -80V Type of transistor: P-MOSFET Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |