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GT700P08S

GT700P08S Goford Semiconductor

GOFORD-GT700P08S.pdf Hersteller: Goford Semiconductor
Description: P-80V,-6.5A,RD(MAX)<72M@-10V,VTH
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 2A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1624 pF @ 40 V
auf Bestellung 3890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.04 EUR
20+ 0.91 EUR
100+ 0.63 EUR
500+ 0.52 EUR
1000+ 0.45 EUR
2000+ 0.4 EUR
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Technische Details GT700P08S Goford Semiconductor

Description: P-80V,-6.5A,RD(MAX).

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GT700P08S GT700P08S Hersteller : Goford Semiconductor GOFORD-GT700P08S.pdf Description: P-80V,-6.5A,RD(MAX)<72M@-10V,VTH
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 2A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1624 pF @ 40 V
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