GWA75H65DRFB2AG STMicroelectronics
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Technische Details GWA75H65DRFB2AG STMicroelectronics
Description: IGBT, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 710 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A, Supplier Device Package: TO-247 Long Leads, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 28ns/103ns, Switching Energy: 12.9mJ (on), 900µJ (off), Test Condition: 400V, 75A, 2.2Ohm, 15V, Gate Charge: 253 nC, Grade: Automotive, Current - Collector (Ic) (Max): 123 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 395 W, Qualification: AEC-Q101.
Weitere Produktangebote GWA75H65DRFB2AG
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GWA75H65DRFB2AG | Hersteller : STMicroelectronics |
Description: IGBTPackaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 710 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Supplier Device Package: TO-247 Long Leads IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 28ns/103ns Switching Energy: 12.9mJ (on), 900µJ (off) Test Condition: 400V, 75A, 2.2Ohm, 15V Gate Charge: 253 nC Grade: Automotive Current - Collector (Ic) (Max): 123 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 395 W Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| GWA75H65DRFB2AG | Hersteller : STMicroelectronics |
IGBTs Automotive-grade trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT |
Produkt ist nicht verfügbar |

