Produkte > ONSEMI > H11A1TM
H11A1TM

H11A1TM onsemi


4N25M-28M_35M-37M%2C%20H11A1M-5M.pdf
Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 10mA
Voltage - Isolation: 4170Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.18V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor with Base
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 2µs, 2µs
Voltage - Output (Max): 30V
Supplier Device Package: 6-DIP
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Technische Details H11A1TM onsemi

Description: OPTOISO 4.17KV TRANS W/BASE 6DIP, Vce Saturation (Max): 400mV, Current Transfer Ratio (Min): 50% @ 10mA, Voltage - Isolation: 4170Vrms, Input Type: DC, Voltage - Forward (Vf) (Typ): 1.18V, Operating Temperature: -40°C ~ 100°C, Mounting Type: Through Hole, Output Type: Transistor with Base, Package / Case: 6-DIP (0.400", 10.16mm), Packaging: Tube, Current - DC Forward (If) (Max): 60 mA, Number of Channels: 1, Part Status: Obsolete, Turn On / Turn Off Time (Typ): 2µs, 2µs, Voltage - Output (Max): 30V, Supplier Device Package: 6-DIP.