H11A817BW ONSEMI
Hersteller: ONSEMIDescription: ONSEMI - H11A817BW - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 10116 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details H11A817BW ONSEMI
Description: OPTOISOLTR 5.3KV 1CH TRANS 4-DIP, Packaging: Tube, Package / Case: 4-DIP (0.400", 10.16mm), Output Type: Transistor, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 100°C, Voltage - Forward (Vf) (Typ): 1.2V, Input Type: DC, Current - Output / Channel: 50mA, Voltage - Isolation: 5300Vrms, Current Transfer Ratio (Min): 130% @ 5mA, Vce Saturation (Max): 200mV, Current Transfer Ratio (Max): 260% @ 5mA, Supplier Device Package: 4-DIP, Voltage - Output (Max): 70V, Rise / Fall Time (Typ): 2.4µs, 2.4µs, Number of Channels: 1, Current - DC Forward (If) (Max): 50 mA.
Weitere Produktangebote H11A817BW
| Foto | Bezeichnung | Hersteller | Beschreibung |
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H11A817BW | Hersteller : onsemi |
Description: OPTOISOLTR 5.3KV 1CH TRANS 4-DIP Packaging: Tube Package / Case: 4-DIP (0.400", 10.16mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5300Vrms Current Transfer Ratio (Min): 130% @ 5mA Vce Saturation (Max): 200mV Current Transfer Ratio (Max): 260% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 70V Rise / Fall Time (Typ): 2.4µs, 2.4µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
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| H11A817BW | Hersteller : onsemi / Fairchild |
Transistor Output Optocouplers Optocoupler Phototransistor |
Produkt ist nicht verfügbar |