Technische Details HAT1089C-EL-E RENESAS
Description: HAT1089C - Pch Single Power Mosf, Packaging: Bulk, Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 103mOhm @ 1A, 4.5V, Power Dissipation (Max): 850mW (Ta), Vgs(th) (Max) @ Id: 1.4V @ 1mA, Supplier Device Package: 6-CMFPAK, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 10 V.
Weitere Produktangebote HAT1089C-EL-E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| HAT1089C-EL-E | Hersteller : RENESAS | SOT23-6 |
auf Bestellung 2178 Stücke: Lieferzeit 21-28 Tag (e) |
||
| HAT1089C-EL-E | Hersteller : TOSHIBA | SOT26/SOT363 |
auf Bestellung 5256 Stücke: Lieferzeit 21-28 Tag (e) |
||
| HAT1089C-EL-E | Hersteller : Renesas |
Description: HAT1089C - Pch Single Power Mosf Packaging: Bulk Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 103mOhm @ 1A, 4.5V Power Dissipation (Max): 850mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 1mA Supplier Device Package: 6-CMFPAK Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 10 V |
Produkt ist nicht verfügbar |