Technische Details HAT1126RJELE RENESAS
Description: PCH POWER MOSFET -60V -6A 50MOHM, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 10V, Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V, FET Feature: Logic Level Gate, 4.5V Drive, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP.
Weitere Produktangebote HAT1126RJELE
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HAT1126RJ-EL-E | Hersteller : Renesas Electronics Corporation |
Description: PCH POWER MOSFET -60V -6A 50MOHM Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
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