HAT2033RWS-E

HAT2033RWS-E Renesas Electronics Corporation


Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
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Technische Details HAT2033RWS-E Renesas Electronics Corporation

Description: MOSFET N-CH 60V 7A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 38mOhm @ 4A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: 8-SOP, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V.

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HAT2033RWS-E Hersteller : Renesas Electronics Renesas Electronics
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