HAT2096H-EL-E RENESAS

Description: MOSFET N-CH 30V 40A LFPAK, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: LFPAK, Power Dissipation (Max): 20W (Tc), Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).