Technische Details HAT2114RJ-EL-E RENESAS
Description: NCH POWER MOSFET 60V 6A 32MOHM S, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 6A, Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V, Rds On (Max) @ Id, Vgs: 40Ohm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP.
Weitere Produktangebote HAT2114RJ-EL-E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| HAT2114RJ-EL-E | Hersteller : RENESAS |
 SOP8 |
auf Bestellung 242 Stücke: Lieferzeit 21-28 Tag (e) |
||
 |
HAT2114RJ-EL-E | Hersteller : Renesas Electronics Corporation |
Description: NCH POWER MOSFET 60V 6A 32MOHM S Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V Rds On (Max) @ Id, Vgs: 40Ohm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
Produkt ist nicht verfügbar |