HAT2165N-EL-E Renesas Electronics Corporation

Description: MOSFET N-CH 30V 55A 8LFPAK, Packaging: Bulk, Package / Case: 8-PowerSOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Ta), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 27.5A, 10V, Power Dissipation (Max): 30W (Tc), Supplier Device Package: 8-LFPAK-iV, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5180 pF @ 10 V.