HAT2165N-EL-E Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: MOSFET N-CH 30V 55A 8LFPAK
Packaging: Bulk
Package / Case: 8-PowerSOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 27.5A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: 8-LFPAK-iV
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5180 pF @ 10 V
auf Bestellung 2365 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 145+ | 3.27 EUR |
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Technische Details HAT2165N-EL-E Renesas Electronics Corporation
Description: MOSFET N-CH 30V 55A 8LFPAK, Packaging: Bulk, Package / Case: 8-PowerSOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Ta), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 27.5A, 10V, Power Dissipation (Max): 30W (Tc), Supplier Device Package: 8-LFPAK-iV, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5180 pF @ 10 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| HAT2165N-EL-E | Hersteller : RENESAS |
2008+ LFPKA |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |