HAT2218R-EL-E Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: MOSFET 2N-CH 30V 7.5A/8A 8SOP
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 3.75A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Supplier Device Package: 8-SOP
auf Bestellung 3981 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 361+ | 1.36 EUR |
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Technische Details HAT2218R-EL-E Renesas Electronics Corporation
Description: MOSFET 2N-CH 30V 7.5A/8A 8SOP, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7.5A, 8A, Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V, Rds On (Max) @ Id, Vgs: 24mOhm @ 3.75A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, FET Feature: Logic Level Gate, 4.5V Drive, Supplier Device Package: 8-SOP.
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