HAT2218R-EL-E Renesas Electronics Corporation

Description: MOSFET 2N-CH 30V 7.5A/8A 8SOP, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7.5A, 8A, Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V, Rds On (Max) @ Id, Vgs: 24mOhm @ 3.75A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, FET Feature: Logic Level Gate, 4.5V Drive, Supplier Device Package: 8-SOP.