HAT2287WP-EL-E Renesas Electronics Corporation

Description: MOSFET N-CH 200V 17A 8WPAK, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 8-WPAK (3), Power Dissipation (Max): 30W (Tc), Rds On (Max) @ Id, Vgs: 94mOhm @ 8.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).