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HBDM60V600X-7

HBDM60V600X-7 Diodes Incorporated

HBDM60V600X.pdf Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP 60V/80V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C
Power - Max: 200mW
Current - Collector (Ic) (Max): 600mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 60V, 80V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA, 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 1V / 100 @ 150mA, 10V
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.22 EUR
6000+0.2 EUR
9000+0.19 EUR
15000+0.18 EUR
21000+0.17 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details HBDM60V600X-7 Diodes Incorporated

Description: TRANS NPN/PNP 60V/80V SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP, Operating Temperature: -55°C ~ 150°C, Power - Max: 200mW, Current - Collector (Ic) (Max): 600mA, 500mA, Voltage - Collector Emitter Breakdown (Max): 60V, 80V, Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA, 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 1V / 100 @ 150mA, 10V, Supplier Device Package: SOT-363, Part Status: Active.

Weitere Produktangebote HBDM60V600X-7 nach Preis ab 0.2 EUR bis 0.97 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
HBDM60V600X-7 HBDM60V600X-7 Hersteller : Diodes Incorporated HBDM60V600X-3104080.pdf Bipolar Transistors - BJT Functional Array SOT363 T&R 3K
auf Bestellung 16564 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.93 EUR
10+0.58 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
3000+0.21 EUR
6000+0.2 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
HBDM60V600X-7 HBDM60V600X-7 Hersteller : Diodes Incorporated HBDM60V600X.pdf Description: TRANS NPN/PNP 60V/80V SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C
Power - Max: 200mW
Current - Collector (Ic) (Max): 600mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 60V, 80V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA, 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 1V / 100 @ 150mA, 10V
Supplier Device Package: SOT-363
auf Bestellung 33190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
30+0.6 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH