HDBL106GH Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: 75NS, 1A, 800V, HIGH EFFICIENT R
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 1.3 EUR |
| 100+ | 0.97 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.69 EUR |
| 2000+ | 0.62 EUR |
| 5000+ | 0.58 EUR |
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Technische Details HDBL106GH Taiwan Semiconductor Corporation
Description: 75NS, 1A, 800V, HIGH EFFICIENT R, Packaging: Tube, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: DBL, Grade: Automotive, Voltage - Peak Reverse (Max): 800 V, Current - Average Rectified (Io): 1 A, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 800 V, Qualification: AEC-Q101.