HER1602 DC COMPONENTS
Hersteller: DC COMPONENTS
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 16A; tube; Ifsm: 150A; TO220; Ufmax: 1V
Case: TO220
Mounting: THT
Kind of package: tube
Load current: 16A
Max. forward voltage: 1V
Max. off-state voltage: 100V
Type of diode: rectifying
Features of semiconductor devices: fast switching
Heatsink thickness: 1.1...1.4mm
Semiconductor structure: common cathode; double
Reverse recovery time: 50ns
Max. forward impulse current: 150A
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 16A; tube; Ifsm: 150A; TO220; Ufmax: 1V
Case: TO220
Mounting: THT
Kind of package: tube
Load current: 16A
Max. forward voltage: 1V
Max. off-state voltage: 100V
Type of diode: rectifying
Features of semiconductor devices: fast switching
Heatsink thickness: 1.1...1.4mm
Semiconductor structure: common cathode; double
Reverse recovery time: 50ns
Max. forward impulse current: 150A
Anzahl je Verpackung: 1 Stücke
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Technische Details HER1602 DC COMPONENTS
Category: THT universal diodes, Description: Diode: rectifying; THT; 100V; 16A; tube; Ifsm: 150A; TO220; Ufmax: 1V, Case: TO220, Mounting: THT, Kind of package: tube, Load current: 16A, Max. forward voltage: 1V, Max. off-state voltage: 100V, Type of diode: rectifying, Features of semiconductor devices: fast switching, Heatsink thickness: 1.1...1.4mm, Semiconductor structure: common cathode; double, Reverse recovery time: 50ns, Max. forward impulse current: 150A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote HER1602
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| HER1602 | Hersteller : DC COMPONENTS |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 16A; tube; Ifsm: 150A; TO220; Ufmax: 1V Case: TO220 Mounting: THT Kind of package: tube Load current: 16A Max. forward voltage: 1V Max. off-state voltage: 100V Type of diode: rectifying Features of semiconductor devices: fast switching Heatsink thickness: 1.1...1.4mm Semiconductor structure: common cathode; double Reverse recovery time: 50ns Max. forward impulse current: 150A |
Produkt ist nicht verfügbar |