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HERA807G

HERA807G Taiwan Semiconductor Corporation

HERA801G SERIES_J2103.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Technology: Standard
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
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50+1.22 EUR
100+1.09 EUR
500+0.86 EUR
1000+0.78 EUR
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Technische Details HERA807G Taiwan Semiconductor Corporation

Description: DIODE STANDARD 800V 8A TO220AC, Current - Reverse Leakage @ Vr: 10 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Voltage - DC Reverse (Vr) (Max): 800 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-220AC, Technology: Standard, Reverse Recovery Time (trr): 80 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube, Current - Average Rectified (Io): 8A, Capacitance @ Vr, F: 55pF @ 4V, 1MHz.

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HERA807G HERA807G Hersteller : Taiwan Semiconductor HERA801G_SERIES_J2103-2821353.pdf Rectifiers 80ns, 8A, 800V, High Efficient Recovery Rectifier
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