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HERAF1008G Taiwan Semiconductor Corporation

HERAF1001G SERIES_I2105.pdf Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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500+ 0.9 EUR
1000+ 0.73 EUR
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Technische Details HERAF1008G Taiwan Semiconductor Corporation

Description: DIODE GEN PURP 1KV 10A ITO220AC, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 80 ns, Technology: Standard, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: ITO-220AC, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V.

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HERAF1008G HERAF1008G Hersteller : Taiwan Semiconductor HERAF1001G_SERIES_I2105-3005274.pdf Rectifiers 80ns, 10A, 1000V, High Efficient Recovery Rectifier
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