HERAF1008G Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 10A ITO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 11+ | 1.67 EUR |
| 50+ | 1.34 EUR |
| 100+ | 1.06 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.73 EUR |
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Technische Details HERAF1008G Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 10A ITO220AC, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: ITO-220AC, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 80 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2 Full Pack, Packaging: Tube.
Weitere Produktangebote HERAF1008G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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HERAF1008G | Hersteller : Taiwan Semiconductor |
Rectifiers 80ns, 10A, 1000V, High Efficient Recovery Rectifier |
Produkt ist nicht verfügbar |