HGT1S20N60A4S9A onsemi
Hersteller: onsemiDescription: IGBT 600V 70A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 15ns/73ns
Switching Energy: 105µJ (on), 150µJ (off)
Test Condition: 390V, 20A, 3Ohm, 15V
Gate Charge: 142 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 290 W
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Technische Details HGT1S20N60A4S9A onsemi
Description: IGBT 600V 70A TO-263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A, Supplier Device Package: TO-263 (D2Pak), Td (on/off) @ 25°C: 15ns/73ns, Switching Energy: 105µJ (on), 150µJ (off), Test Condition: 390V, 20A, 3Ohm, 15V, Gate Charge: 142 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 70 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 280 A, Power - Max: 290 W.
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HGT1S20N60A4S9A | Hersteller : onsemi / Fairchild |
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