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HGT1S20N60A4S9A

HGT1S20N60A4S9A onsemi


HGT1S20N60A4S9A.pdf
Hersteller: onsemi
Description: IGBT 600V 70A TO-263
Power - Max: 290 W
Current - Collector Pulsed (Icm): 280 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 70 A
Part Status: Obsolete
Gate Charge: 142 nC
Test Condition: 390V, 20A, 3Ohm, 15V
Switching Energy: 105µJ (on), 150µJ (off)
Td (on/off) @ 25°C: 15ns/73ns
Supplier Device Package: TO-263 (D2Pak)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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Technische Details HGT1S20N60A4S9A onsemi

Description: IGBT 600V 70A TO-263, Power - Max: 290 W, Current - Collector Pulsed (Icm): 280 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 70 A, Part Status: Obsolete, Gate Charge: 142 nC, Test Condition: 390V, 20A, 3Ohm, 15V, Switching Energy: 105µJ (on), 150µJ (off), Td (on/off) @ 25°C: 15ns/73ns, Supplier Device Package: TO-263 (D2Pak), Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.

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HGT1S20N60A4S9A HGT1S20N60A4S9A onsemi / Fairchild fairchild_semiconductor_hgt1s20n60a4s9a-1191540.pdf IGBT Transistors 600V SMPS SERIES NCH IGBT
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HGT1S20N60A4S9A fairchild_semiconductor_hgt1s20n60a4s9a-1191540.pdf
HGT1S20N60A4S9A
Hersteller: onsemi / Fairchild
IGBT Transistors 600V SMPS SERIES NCH IGBT
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Im Einkaufswagen  Stück im Wert von  UAH