Produkte > HARRIS CORPORATION > HGT1S20N60C3R
HGT1S20N60C3R

HGT1S20N60C3R Harris Corporation


HRISS475-1.pdf?t.download=true&u=5oefqw Hersteller: Harris Corporation
Description: 40A, 600V, RUGGED N-CHANNEL IGBT
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-262 (I2PAK)
Gate Charge: 116 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 164 W
auf Bestellung 580 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
155+3.2 EUR
Mindestbestellmenge: 155
Produktrezensionen
Produktbewertung abgeben

Technische Details HGT1S20N60C3R Harris Corporation

Description: 40A, 600V, RUGGED N-CHANNEL IGBT, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A, Supplier Device Package: TO-262 (I2PAK), Gate Charge: 116 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 164 W.