Produkte > ON SEMICONDUCTOR > HGTG18N120BN

HGTG18N120BN ON Semiconductor

Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 1200V 54A 390000mW 3-Pin(3+Tab) TO-247 Tube

Produkt ist nicht verfügbar

Produktrezensionen

Technische Details HGTG18N120BN ON Semiconductor

Description: IGBT 1200V 54A 390W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 18A, Supplier Device Package: TO-247-3, IGBT Type: NPT, Td (on/off) @ 25°C: 23ns/170ns, Switching Energy: 800µJ (on), 1.8mJ (off), Test Condition: 960V, 18A, 3Ohm, 15V, Gate Charge: 165 nC, Current - Collector (Ic) (Max): 54 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 165 A, Power - Max: 390 W.

Weitere Produktangebote HGTG18N120BN

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis ohne MwSt
	HGTG18N120BN	Hersteller : onsemi	Description: IGBT 1200V 54A 390W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 18A Supplier Device Package: TO-247-3 IGBT Type: NPT Td (on/off) @ 25°C: 23ns/170ns Switching Energy: 800µJ (on), 1.8mJ (off) Test Condition: 960V, 18A, 3Ohm, 15V Gate Charge: 165 nC Current - Collector (Ic) (Max): 54 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 165 A Power - Max: 390 W	Produkt ist nicht verfügbar
	HGTG18N120BN	Hersteller : onsemi / Fairchild	IGBT Transistors 54A 1200V N-Ch	Produkt ist nicht verfügbar