Produkte > HARRIS CORPORATION > HGTP10N50E1D
HGTP10N50E1D

HGTP10N50E1D Harris Corporation


HRISD027-3-20.pdf?t.download=true&u=5oefqw Hersteller: Harris Corporation
Description: IGBT 500V 17.5A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A
Supplier Device Package: TO-220
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 17.5 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 75 W
auf Bestellung 3712 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
101+4.6 EUR
Mindestbestellmenge: 101
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details HGTP10N50E1D Harris Corporation

Description: IGBT 500V 17.5A TO-220, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A, Supplier Device Package: TO-220, Gate Charge: 19 nC, Part Status: Active, Current - Collector (Ic) (Max): 17.5 A, Voltage - Collector Emitter Breakdown (Max): 500 V, Power - Max: 75 W.