HGTP5N120CN

HGTP5N120CN Fairchild Semiconductor


FAIRS35148-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: IGBT, 25A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 5.5A
Supplier Device Package: TO-220AB
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/180ns
Switching Energy: 400µJ (on), 640µJ (off)
Test Condition: 960V, 5.5A, 25Ohm, 15V
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 167 W
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Technische Details HGTP5N120CN Fairchild Semiconductor

Description: IGBT, 25A, 1200V, N-CHANNEL, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 5.5A, Supplier Device Package: TO-220AB, IGBT Type: NPT, Td (on/off) @ 25°C: 22ns/180ns, Switching Energy: 400µJ (on), 640µJ (off), Test Condition: 960V, 5.5A, 25Ohm, 15V, Gate Charge: 75 nC, Part Status: Active, Current - Collector (Ic) (Max): 25 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 167 W.