HGTP6N40E1D

HGTP6N40E1D Harris Corporation


HRISD027-3-11.pdf?t.download=true&u=5oefqw Hersteller: Harris Corporation
Description: 7.5A, 400V, N-CHANNEL IGBT
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 10V, 3A
Supplier Device Package: TO-220
Gate Charge: 6.9 nC
Part Status: Active
Current - Collector (Ic) (Max): 7.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector Pulsed (Icm): 7.5 A
Power - Max: 75 W
auf Bestellung 1131 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
423+1.15 EUR
Mindestbestellmenge: 423
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Technische Details HGTP6N40E1D Harris Corporation

Description: 7.5A, 400V, N-CHANNEL IGBT, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 10V, 3A, Supplier Device Package: TO-220, Gate Charge: 6.9 nC, Part Status: Active, Current - Collector (Ic) (Max): 7.5 A, Voltage - Collector Emitter Breakdown (Max): 400 V, Current - Collector Pulsed (Icm): 7.5 A, Power - Max: 75 W.