Produkte > TOSHIBA > HN1A01F-Y(TE85L,F)
HN1A01F-Y(TE85L,F)

HN1A01F-Y(TE85L,F) Toshiba

HN1A01F_datasheet_en_20210625-843972.pdf
Hersteller: Toshiba
Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A
auf Bestellung 3397 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.77 EUR
10+0.76 EUR
100+0.39 EUR
1000+0.23 EUR
3000+0.2 EUR
9000+0.13 EUR
24000+0.12 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details HN1A01F-Y(TE85L,F) Toshiba

Description: TRANS 2PNP 50V 0.15A SM6, Frequency - Transition: 80MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 150mA, Power - Max: 300mW, Operating Temperature: 125°C (TJ), Transistor Type: 2 PNP (Dual), Mounting Type: Surface Mount, Package / Case: SC-74, SOT-457, Packaging: Cut Tape (CT), Part Status: Active, Supplier Device Package: SM6.

Weitere Produktangebote HN1A01F-Y(TE85L,F)

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
HN1A01F-Y(TE85L,F) HN1A01F-Y(TE85L,F) Hersteller : Toshiba Semiconductor and Storage HN1A01F_datasheet_en_20210625.pdf?did=19140&prodName=HN1A01F Description: TRANS 2PNP 50V 0.15A SM6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 300mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SM6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH