HN1A01F-Y(TE85L,F) Toshiba
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.83 EUR |
| 10+ | 0.7 EUR |
| 100+ | 0.65 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.36 EUR |
| 3000+ | 0.18 EUR |
| 6000+ | 0.13 EUR |
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Technische Details HN1A01F-Y(TE85L,F) Toshiba
Description: TRANS 2PNP 50V 0.15A SM6, Packaging: Cut Tape (CT), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 125°C (TJ), Power - Max: 300mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: SM6, Part Status: Active.
Weitere Produktangebote HN1A01F-Y(TE85L,F)
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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HN1A01F-Y(TE85L,F) | Toshiba Semiconductor and Storage |
 Description: TRANS 2PNP 50V 0.15A SM6Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 125°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SM6 Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| HN1A01F-Y(TE85L,F) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SM6
Part Status: Active
Description: TRANS 2PNP 50V 0.15A SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SM6
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH