Produkte > TOSHIBA > HN1A01FE-GR,LF
HN1A01FE-GR,LF

HN1A01FE-GR,LF Toshiba


hn1a01fe_datasheet_en_20210818.pdf Hersteller: Toshiba
Trans GP BJT PNP 50V 0.15A 100mW 6-Pin ES T/R
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details HN1A01FE-GR,LF Toshiba

Description: TRANS 2PNP 50V 0.15A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 150°C (TJ), Power - Max: 100mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: ES6, Part Status: Active.

Weitere Produktangebote HN1A01FE-GR,LF

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
HN1A01FE-GR,LF HN1A01FE-GR,LF Hersteller : Toshiba Semiconductor and Storage HN1A01FE_datasheet_en_20210818.pdf?did=22309&prodName=HN1A01FE Description: TRANS 2PNP 50V 0.15A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
Produkt ist nicht verfügbar
HN1A01FE-GR,LF HN1A01FE-GR,LF Hersteller : Toshiba HN1A01FE_datasheet_en_20210818-1140132.pdf Bipolar Transistors - BJT Bias Resistor Built-in transistor
Produkt ist nicht verfügbar