Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > HN1A01FE-GR,LXHF
HN1A01FE-GR,LXHF

HN1A01FE-GR,LXHF Toshiba Semiconductor and Storage

HN1A01FE_datasheet_en_20210818.pdf?did=22309&prodName=HN1A01FE
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + PNP TR VCEO:-50
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.33 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details HN1A01FE-GR,LXHF Toshiba Semiconductor and Storage

Description: AUTO AEC-Q PNP + PNP TR VCEO:-50, Transistor Type: 2 PNP (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: ES6, Frequency - Transition: 80MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 150mA, Power - Max: 100mW, Operating Temperature: 150°C (TJ).

Weitere Produktangebote HN1A01FE-GR,LXHF nach Preis ab 0.25 EUR bis 1.24 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
HN1A01FE-GR,LXHF HN1A01FE-GR,LXHF Toshiba Semiconductor and Storage HN1A01FE_datasheet_en_20210818.pdf?did=22309&prodName=HN1A01FE Description: AUTO AEC-Q PNP + PNP TR VCEO:-50
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
auf Bestellung 7702 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.94 EUR
26+0.81 EUR
100+0.61 EUR
500+0.48 EUR
1000+0.37 EUR
2000+0.33 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1A01FE-GR,LXHF HN1A01FE-GR,LXHF Toshiba 7C3FA805E0917D8D425925321901F43B9A8BBD5AC49DF9ABBFAEF23A0F1D83BD.pdf Bipolar Transistors - BJT AUTO AEC-Q PNP + PNP Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-563 (ES6)
auf Bestellung 7700 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.24 EUR
10+0.77 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.35 EUR
2000+0.31 EUR
4000+0.25 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1A01FE-GR,LXHF HN1A01FE_datasheet_en_20210818.pdf?did=22309&prodName=HN1A01FE
HN1A01FE-GR,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + PNP TR VCEO:-50
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
auf Bestellung 7702 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.94 EUR
26+0.81 EUR
100+0.61 EUR
500+0.48 EUR
1000+0.37 EUR
2000+0.33 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1A01FE-GR,LXHF 7C3FA805E0917D8D425925321901F43B9A8BBD5AC49DF9ABBFAEF23A0F1D83BD.pdf
HN1A01FE-GR,LXHF
Hersteller: Toshiba
Bipolar Transistors - BJT AUTO AEC-Q PNP + PNP Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-563 (ES6)
auf Bestellung 7700 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+1.24 EUR
10+0.77 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.35 EUR
2000+0.31 EUR
4000+0.25 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH