HN1A01FU-Y,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP DUAL 50V 150MA US6
Part Status: Active
Supplier Device Package: US6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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Technische Details HN1A01FU-Y,LF Toshiba Semiconductor and Storage
Description: TRANS 2PNP DUAL 50V 150MA US6, Part Status: Active, Supplier Device Package: US6, Frequency - Transition: 80MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 150mA, Power - Max: 200mW, Operating Temperature: 125°C (TJ), Transistor Type: 2 PNP (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote HN1A01FU-Y,LF nach Preis ab 0.075 EUR bis 0.42 EUR
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HN1A01FU-Y,LF | Toshiba |
Bipolar Transistors - BJT US6 PLN TRANSISTOR Pd=200mW F=1MHz |
auf Bestellung 8184 Stücke: Lieferzeit 10-14 Tag (e) |
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HN1A01FU-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP DUAL 50V 150MA US6 Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA Power - Max: 200mW Operating Temperature: 125°C (TJ) Transistor Type: 2 PNP (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: US6 Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V |
auf Bestellung 3119 Stücke: Lieferzeit 10-14 Tag (e) |
|
| HN1A01FU-Y,LF |
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Hersteller: Toshiba
Bipolar Transistors - BJT US6 PLN TRANSISTOR Pd=200mW F=1MHz
Bipolar Transistors - BJT US6 PLN TRANSISTOR Pd=200mW F=1MHz
auf Bestellung 8184 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 0.42 EUR |
| 14+ | 0.25 EUR |
| 100+ | 0.15 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| 3000+ | 0.088 EUR |
| 6000+ | 0.075 EUR |
| HN1A01FU-Y,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP DUAL 50V 150MA US6
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: US6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Description: TRANS 2PNP DUAL 50V 150MA US6
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: US6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
auf Bestellung 3119 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 0.42 EUR |
| 84+ | 0.25 EUR |
| 135+ | 0.15 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.1 EUR |