HN1A01FU-Y,LF

HN1A01FU-Y,LF Toshiba Semiconductor and Storage


HN1A01FU_datasheet_en_20210630.pdf?did=19142&prodName=HN1A01FU Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.11 EUR
Mindestbestellmenge: 3000
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Produktbewertung abgeben

Technische Details HN1A01FU-Y,LF Toshiba Semiconductor and Storage

Description: TRANS 2PNP 50V 0.15A US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 125°C (TJ), Power - Max: 200mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: US6, Part Status: Active.

Weitere Produktangebote HN1A01FU-Y,LF nach Preis ab 0.073 EUR bis 0.65 EUR

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HN1A01FU-Y,LF HN1A01FU-Y,LF Hersteller : Toshiba Semiconductor and Storage HN1A01FU_datasheet_en_20210630.pdf?did=19142&prodName=HN1A01FU Description: TRANS 2PNP 50V 0.15A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 4491 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
40+0.65 EUR
61+ 0.43 EUR
124+ 0.21 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 40
HN1A01FU-Y,LF HN1A01FU-Y,LF Hersteller : Toshiba HN1A01FU_datasheet_en_20210630-1916281.pdf Bipolar Transistors - BJT US6 PLN TRANSISTOR Pd=200mW F=1MHz
auf Bestellung 3676 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
80+0.65 EUR
119+ 0.44 EUR
286+ 0.18 EUR
1000+ 0.12 EUR
3000+ 0.096 EUR
9000+ 0.083 EUR
45000+ 0.073 EUR
Mindestbestellmenge: 80
HN1A01FU-Y,LF HN1A01FU-Y,LF Hersteller : Toshiba hn1a01fu_datasheet_en_20210630.pdf Trans GP BJT PNP 50V 0.15A 200mW 6-Pin US T/R
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