Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > HN1A01FU-Y,LXHF
HN1A01FU-Y,LXHF

HN1A01FU-Y,LXHF Toshiba Semiconductor and Storage

HN1A01FU_datasheet_en_20210630.pdf?did=19142&prodName=HN1A01FU Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + PNP TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.074 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details HN1A01FU-Y,LXHF Toshiba Semiconductor and Storage

Description: AUTO AEC-Q PNP + PNP TR VCEO:-50, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: US6, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote HN1A01FU-Y,LXHF nach Preis ab 0.09 EUR bis 0.56 EUR

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HN1A01FU-Y,LXHF HN1A01FU-Y,LXHF Hersteller : Toshiba 4232464544423942424139304232354539394437434631443444313630323639.pdf Bipolar Transistors - BJT AUTO AEC-Q PNP + PNP Tr VCEO:-50V Ic:-0.15A hFE:120-400 SOT-363 (US6)
auf Bestellung 5658 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.47 EUR
10+0.29 EUR
100+0.18 EUR
500+0.14 EUR
1000+0.12 EUR
3000+0.099 EUR
6000+0.09 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
HN1A01FU-Y,LXHF HN1A01FU-Y,LXHF Hersteller : Toshiba Semiconductor and Storage HN1A01FU_datasheet_en_20210630.pdf?did=19142&prodName=HN1A01FU Description: AUTO AEC-Q PNP + PNP TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5978 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
45+0.39 EUR
100+0.2 EUR
500+0.16 EUR
1000+0.12 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH