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HN1B04FE-Y,LF

HN1B04FE-Y,LF Toshiba

E439D0883457BFB0629C352F564DC2F4A15E17991D11E6840980F66610B62CAE.pdf
Hersteller: Toshiba
Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
auf Bestellung 31693 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+0.36 EUR
13+0.22 EUR
100+0.14 EUR
500+0.1 EUR
1000+0.092 EUR
2000+0.081 EUR
4000+0.062 EUR
Mindestbestellmenge: 8
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Technische Details HN1B04FE-Y,LF Toshiba

Description: TRANS NPN/PNP 50V 0.15A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: NPN, PNP, Operating Temperature: 150°C (TJ), Power - Max: 100mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: ES6, Part Status: Active.

Weitere Produktangebote HN1B04FE-Y,LF

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HN1B04FE-Y,LF HN1B04FE-Y,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=22308&prodName=HN1B04FE Description: TRANS NPN/PNP 50V 0.15A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
HN1B04FE-Y,LF HN1B04FE-Y,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=22308&prodName=HN1B04FE Description: TRANS NPN/PNP 50V 0.15A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH