HN1B04FE-Y,LF Toshiba
| Anzahl | Preis |
|---|---|
| 8+ | 0.36 EUR |
| 13+ | 0.22 EUR |
| 100+ | 0.14 EUR |
| 500+ | 0.1 EUR |
| 1000+ | 0.092 EUR |
| 2000+ | 0.081 EUR |
| 4000+ | 0.062 EUR |
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Technische Details HN1B04FE-Y,LF Toshiba
Description: TRANS NPN/PNP 50V 0.15A ES6, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 150mA, Power - Max: 100mW, Operating Temperature: 150°C (TJ), Transistor Type: NPN, PNP, Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: ES6, Frequency - Transition: 80MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA.
Weitere Produktangebote HN1B04FE-Y,LF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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HN1B04FE-Y,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP 50V 0.15A ES6Part Status: Active Supplier Device Package: ES6 Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA Power - Max: 100mW Operating Temperature: 150°C (TJ) Transistor Type: NPN, PNP Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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HN1B04FE-Y,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP 50V 0.15A ES6Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA Power - Max: 100mW Operating Temperature: 150°C (TJ) Transistor Type: NPN, PNP Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: ES6 Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA |
Produkt ist nicht verfügbar |

