HN1B04FE-Y,LF Toshiba
| Anzahl | Privatkunde |
|---|---|
| 8+ | 0.43 EUR |
| 13+ | 0.26 EUR |
| 100+ | 0.17 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| 2000+ | 0.096 EUR |
| 4000+ | 0.074 EUR |
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Technische Details HN1B04FE-Y,LF Toshiba
Description: TRANS NPN/PNP 50V 0.15A ES6, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 150mA, Power - Max: 100mW, Operating Temperature: 150°C (TJ), Transistor Type: NPN, PNP, Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: ES6, Frequency - Transition: 80MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA.
Weitere Produktangebote HN1B04FE-Y,LF nach Preis ab 0.039 EUR bis 0.083 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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HN1B04FE-Y,LF | Toshiba Semiconductor and Storage |
 Description: TRANS NPN/PNP 50V 0.15A ES6Part Status: Active Supplier Device Package: ES6 Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA Power - Max: 100mW Operating Temperature: 150°C (TJ) Transistor Type: NPN, PNP Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| HN1B04FE-Y,LF | Toshiba |
Trans GP BJT NPN/PNP 50V 0.15A 100mW 6-Pin ES T/R |
auf Bestellung 6908 Stücke: Lieferzeit 14-21 Tag (e) |
|
| HN1B04FE-Y,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A ES6
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: NPN, PNP
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS NPN/PNP 50V 0.15A ES6
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: NPN, PNP
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
| HN1B04FE-Y,LF |
|
Hersteller: Toshiba
Trans GP BJT NPN/PNP 50V 0.15A 100mW 6-Pin ES T/R
Trans GP BJT NPN/PNP 50V 0.15A 100mW 6-Pin ES T/R
auf Bestellung 6908 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2084+ | 0.083 EUR |
| 3096+ | 0.055 EUR |
| 3125+ | 0.051 EUR |
| 3185+ | 0.049 EUR |
| 3247+ | 0.046 EUR |
| 3312+ | 0.043 EUR |
| 3379+ | 0.04 EUR |
| 3449+ | 0.039 EUR |