Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > HN1B04FE-Y,LXHF
HN1B04FE-Y,LXHF

HN1B04FE-Y,LXHF Toshiba Semiconductor and Storage

HN1B04FE_datasheet_en_20220118.pdf?did=22308&prodName=HN1B04FE
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.24 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details HN1B04FE-Y,LXHF Toshiba Semiconductor and Storage

Description: AUTO AEC-Q PNP + NPN TR VCEO:-50, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP, Operating Temperature: 150°C (TJ), Power - Max: 100mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: ES6, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote HN1B04FE-Y,LXHF nach Preis ab 0.27 EUR bis 1.37 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
HN1B04FE-Y,LXHF HN1B04FE-Y,LXHF Toshiba Semiconductor and Storage HN1B04FE_datasheet_en_20220118.pdf?did=22308&prodName=HN1B04FE Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7998 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.83 EUR
30+0.71 EUR
100+0.49 EUR
500+0.38 EUR
1000+0.31 EUR
2000+0.27 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1B04FE-Y,LXHF HN1B04FE-Y,LXHF Toshiba E439D0883457BFB0629C352F564DC2F4A15E17991D11E6840980F66610B62CAE.pdf Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-563 (ES6)
auf Bestellung 1254 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.37 EUR
10+0.84 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.37 EUR
2000+0.33 EUR
4000+0.27 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1B04FE-Y,LXHF HN1B04FE_datasheet_en_20220118.pdf?did=22308&prodName=HN1B04FE
HN1B04FE-Y,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7998 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
30+0.71 EUR
100+0.49 EUR
500+0.38 EUR
1000+0.31 EUR
2000+0.27 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1B04FE-Y,LXHF E439D0883457BFB0629C352F564DC2F4A15E17991D11E6840980F66610B62CAE.pdf
HN1B04FE-Y,LXHF
Hersteller: Toshiba
Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-563 (ES6)
auf Bestellung 1254 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+1.37 EUR
10+0.84 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.37 EUR
2000+0.33 EUR
4000+0.27 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH