HN1B04FU-Y,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 150MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 150MHz
Supplier Device Package: US6
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Technische Details HN1B04FU-Y,LF Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 150MA US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP, Operating Temperature: 125°C (TJ), Power - Max: 200mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Frequency - Transition: 150MHz, Supplier Device Package: US6.
Weitere Produktangebote HN1B04FU-Y,LF nach Preis ab 0.06 EUR bis 0.35 EUR
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HN1B04FU-Y,LF | Toshiba |
Bipolar Transistors - BJT LF Transistor +/-.15A +/-50V |
auf Bestellung 6116 Stücke: Lieferzeit 10-14 Tag (e) |
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HN1B04FU-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP 50V 150MA US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 125°C (TJ) Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 150MHz Supplier Device Package: US6 |
auf Bestellung 10733 Stücke: Lieferzeit 10-14 Tag (e) |
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| HN1B04FU-Y,LF |
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Hersteller: Toshiba
Bipolar Transistors - BJT LF Transistor +/-.15A +/-50V
Bipolar Transistors - BJT LF Transistor +/-.15A +/-50V
auf Bestellung 6116 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 0.39 EUR |
| 14+ | 0.25 EUR |
| 100+ | 0.15 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.1 EUR |
| 3000+ | 0.082 EUR |
| 6000+ | 0.071 EUR |
| HN1B04FU-Y,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 150MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 150MHz
Supplier Device Package: US6
Description: TRANS NPN/PNP 50V 150MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 150MHz
Supplier Device Package: US6
auf Bestellung 10733 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 0.42 EUR |
| 84+ | 0.25 EUR |
| 136+ | 0.15 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.1 EUR |