HN1B04FU-Y,LF

HN1B04FU-Y,LF Toshiba Semiconductor and Storage


docget.jsp?did=19150&prodName=HN1B04FU Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 150MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 150MHz
Supplier Device Package: US6
auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.07 EUR
6000+0.06 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details HN1B04FU-Y,LF Toshiba Semiconductor and Storage

Description: TRANS NPN/PNP 50V 150MA US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP, Operating Temperature: 125°C (TJ), Power - Max: 200mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Frequency - Transition: 150MHz, Supplier Device Package: US6.

Weitere Produktangebote HN1B04FU-Y,LF nach Preis ab 0.05 EUR bis 0.41 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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HN1B04FU-Y,LF HN1B04FU-Y,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=19150&prodName=HN1B04FU Description: TRANS NPN/PNP 50V 150MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 150MHz
Supplier Device Package: US6
auf Bestellung 12898 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
82+0.21 EUR
133+0.13 EUR
500+0.10 EUR
1000+0.09 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
HN1B04FU-Y,LF HN1B04FU-Y,LF Hersteller : Toshiba HN1B04FU_datasheet_en_20220304-1316048.pdf Bipolar Transistors - BJT LF Transistor +/-.15A +/-50V
auf Bestellung 8076 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+0.41 EUR
10+0.30 EUR
100+0.12 EUR
1000+0.08 EUR
3000+0.07 EUR
9000+0.06 EUR
24000+0.05 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH