HN1C01F-GR(TE85L,F

HN1C01F-GR(TE85L,F Toshiba Semiconductor and Storage


HN1C01F_datasheet_en_20210625.pdf?did=19165&prodName=HN1C01F Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 800MHz
Supplier Device Package: SM6
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.094 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details HN1C01F-GR(TE85L,F Toshiba Semiconductor and Storage

Description: TRANS 2NPN DUAL 50V 150MA SM6, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: 125°C (TJ), Power - Max: 300mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Frequency - Transition: 800MHz, Supplier Device Package: SM6.

Weitere Produktangebote HN1C01F-GR(TE85L,F nach Preis ab 0.092 EUR bis 0.52 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
HN1C01F-GR(TE85L,F HN1C01F-GR(TE85L,F Hersteller : Toshiba Semiconductor and Storage HN1C01F_datasheet_en_20210625.pdf?did=19165&prodName=HN1C01F Description: TRANS 2NPN DUAL 50V 150MA SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 800MHz
Supplier Device Package: SM6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
62+0.29 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
HN1C01F-GR(TE85L,F HN1C01F-GR(TE85L,F Hersteller : Toshiba HN1C01F_datasheet_en_20210625-1628505.pdf Bipolar Transistors - BJT Trans LFreq 50V NPN NPN 0.15A
auf Bestellung 1096 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.52 EUR
10+0.47 EUR
100+0.33 EUR
500+0.22 EUR
1000+0.17 EUR
3000+0.1 EUR
6000+0.092 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
HN1C01F-GR(TE85L,F HN1C01F-GR(TE85L,F Hersteller : Toshiba 722docget.jsptypedatasheetlangenpidhn1c01f.jsptypedatasheetlangenpid.pdf Trans GP BJT NPN 50V 0.15A 6-Pin SM T/R
Produkt ist nicht verfügbar
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