Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > HN1C01FE-Y,LXHF
HN1C01FE-Y,LXHF

HN1C01FE-Y,LXHF Toshiba Semiconductor and Storage

HN1C01FE_datasheet_en_20210818.pdf?did=22307&prodName=HN1C01FE
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA ES6
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4000+0.11 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details HN1C01FE-Y,LXHF Toshiba Semiconductor and Storage

Description: TRANS 2NPN DUAL 50V 150MA ES6, Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 150mA, Power - Max: 100mW, Operating Temperature: 150°C (TJ), Transistor Type: 2 NPN (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: ES6, Frequency - Transition: 80MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Qualification: AEC-Q101, Grade: Automotive.

Weitere Produktangebote HN1C01FE-Y,LXHF nach Preis ab 0.09 EUR bis 0.55 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
HN1C01FE-Y,LXHF HN1C01FE-Y,LXHF Toshiba EA8F53DC000E25444A42E1DC31F674201B066F9691C4EAE30F3630E42674269B.pdf Bipolar Transistors - BJT AUTO AEC-Q NPN + NPN Tr VCEO:50V Ic:0.15A hFE:120-400 SOT-563 (ES6)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
6+0.5 EUR
10+0.3 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
4000+0.09 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1C01FE-Y,LXHF HN1C01FE-Y,LXHF Toshiba Semiconductor and Storage HN1C01FE_datasheet_en_20210818.pdf?did=22307&prodName=HN1C01FE Description: TRANS 2NPN DUAL 50V 150MA ES6
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
auf Bestellung 7988 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
53+0.34 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
2000+0.12 EUR
Mindestbestellmenge: 33 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1C01FE-Y,LXHF EA8F53DC000E25444A42E1DC31F674201B066F9691C4EAE30F3630E42674269B.pdf
HN1C01FE-Y,LXHF
Hersteller: Toshiba
Bipolar Transistors - BJT AUTO AEC-Q NPN + NPN Tr VCEO:50V Ic:0.15A hFE:120-400 SOT-563 (ES6)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+0.5 EUR
10+0.3 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
4000+0.09 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1C01FE-Y,LXHF HN1C01FE_datasheet_en_20210818.pdf?did=22307&prodName=HN1C01FE
HN1C01FE-Y,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA ES6
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
auf Bestellung 7988 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
33+0.55 EUR
53+0.34 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
2000+0.12 EUR
Mindestbestellmenge: 33 Stücke
Im Einkaufswagen  Stück im Wert von  UAH