Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > HN1C01FU-GR,LXHF
HN1C01FU-GR,LXHF

HN1C01FU-GR,LXHF Toshiba Semiconductor and Storage

HN1C01FU_datasheet_en_20210706.pdf?did=19152&prodName=HN1C01FU Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN + NPN TR VCEO:50V
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.22 EUR
Mindestbestellmenge: 3000
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Technische Details HN1C01FU-GR,LXHF Toshiba Semiconductor and Storage

Description: AUTO AEC-Q NPN + NPN TR VCEO:50V, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: US6, Part Status: Active.

Weitere Produktangebote HN1C01FU-GR,LXHF nach Preis ab 0.29 EUR bis 0.97 EUR

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HN1C01FU-GR,LXHF HN1C01FU-GR,LXHF Hersteller : Toshiba Semiconductor and Storage HN1C01FU_datasheet_en_20210706.pdf?did=19152&prodName=HN1C01FU Description: AUTO AEC-Q NPN + NPN TR VCEO:50V
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.65 EUR
100+ 0.48 EUR
500+ 0.37 EUR
1000+ 0.3 EUR
Mindestbestellmenge: 28
HN1C01FU-GR,LXHF HN1C01FU-GR,LXHF Hersteller : Toshiba HN1C01FU_datasheet_en_20210706-1627341.pdf Bipolar Transistors - BJT AUTO AEC-Q NPN + NPN Tr VCEO:50V Ic:0.15A hFE:200-400 SOT-363 (US6)
auf Bestellung 5705 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
54+0.97 EUR
64+ 0.82 EUR
100+ 0.57 EUR
500+ 0.45 EUR
1000+ 0.36 EUR
3000+ 0.31 EUR
9000+ 0.29 EUR
Mindestbestellmenge: 54