HN1C01FU-Y,LF

HN1C01FU-Y,LF Toshiba Semiconductor and Storage


docget.jsp?did=19152&prodName=HN1C01FU Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 12000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.07 EUR
6000+0.06 EUR
9000+0.06 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details HN1C01FU-Y,LF Toshiba Semiconductor and Storage

Description: TRANS 2NPN DUAL 50V 150MA US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: 125°C (TJ), Power - Max: 200mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: US6, Part Status: Active.

Weitere Produktangebote HN1C01FU-Y,LF nach Preis ab 0.06 EUR bis 0.37 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
HN1C01FU-Y,LF HN1C01FU-Y,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=19152&prodName=HN1C01FU Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 14987 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
85+0.21 EUR
138+0.13 EUR
500+0.09 EUR
1000+0.08 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
HN1C01FU-Y,LF HN1C01FU-Y,LF Hersteller : Toshiba HN1C01FU_datasheet_en_20210706-1627341.pdf Bipolar Transistors - BJT NPN + NPN Ind. Transistor, VCEO=50V, IC=0.15A, hFE=120 to 400 in SOT-26 (SM6) package
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+0.37 EUR
13+0.22 EUR
100+0.14 EUR
500+0.10 EUR
1000+0.08 EUR
3000+0.07 EUR
6000+0.06 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH