Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > HN1C01FU-Y,LXHF
HN1C01FU-Y,LXHF

HN1C01FU-Y,LXHF Toshiba Semiconductor and Storage

HN1C01FU_datasheet_en_20210706.pdf?did=19152&prodName=HN1C01FU Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN + NPN TR VCEO:50V
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.23 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details HN1C01FU-Y,LXHF Toshiba Semiconductor and Storage

Description: AUTO AEC-Q NPN + NPN TR VCEO:50V, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: US6, Part Status: Active.

Weitere Produktangebote HN1C01FU-Y,LXHF nach Preis ab 0.20 EUR bis 0.89 EUR

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HN1C01FU-Y,LXHF HN1C01FU-Y,LXHF Hersteller : Toshiba Semiconductor and Storage HN1C01FU_datasheet_en_20210706.pdf?did=19152&prodName=HN1C01FU Description: AUTO AEC-Q NPN + NPN TR VCEO:50V
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 5870 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
39+0.45 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.20 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
HN1C01FU-Y,LXHF HN1C01FU-Y,LXHF Hersteller : Toshiba HN1C01FU_datasheet_en_20210706-1627341.pdf Bipolar Transistors - BJT AUTO AEC-Q NPN + NPN Tr VCEO:50V Ic:0.15A hFE:120-240 SOT-363 (US6)
auf Bestellung 5792 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.89 EUR
10+0.59 EUR
100+0.39 EUR
500+0.29 EUR
1000+0.27 EUR
3000+0.21 EUR
9000+0.20 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH