HN1C03FU-B,LF

HN1C03FU-B,LF Toshiba Semiconductor and Storage


docget.jsp?did=19156&prodName=HN1C03FU Hersteller: Toshiba Semiconductor and Storage
Description: NPN + NPN IND. TRANSISTOR VCEO20
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 2906 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
27+0.99 EUR
36+ 0.73 EUR
100+ 0.41 EUR
500+ 0.27 EUR
1000+ 0.21 EUR
Mindestbestellmenge: 27
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Technische Details HN1C03FU-B,LF Toshiba Semiconductor and Storage

Description: NPN + NPN IND. TRANSISTOR VCEO20, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: 150°C (TJ), Power - Max: 200mW, Current - Collector (Ic) (Max): 300mA, Voltage - Collector Emitter Breakdown (Max): 20V, Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V, Frequency - Transition: 30MHz, Supplier Device Package: US6, Part Status: Active.

Weitere Produktangebote HN1C03FU-B,LF nach Preis ab 0.28 EUR bis 0.99 EUR

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HN1C03FU-B,LF HN1C03FU-B,LF Hersteller : Toshiba HN1C03FU_datasheet_en_20140301-1609071.pdf Bipolar Transistors - BJT NPN + NPN Ind. Transistor, VCEO=20V, IC=0.3A, hFE=350 to 1200 in SOT-26 (SM6) package
auf Bestellung 14510 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
53+0.99 EUR
70+ 0.75 EUR
122+ 0.43 EUR
500+ 0.28 EUR
Mindestbestellmenge: 53
HN1C03FU-B,LF HN1C03FU-B,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=19156&prodName=HN1C03FU Description: NPN + NPN IND. TRANSISTOR VCEO20
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: US6
Part Status: Active
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