HN1C03FU-B,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: NPN + NPN IND. TRANSISTOR VCEO20
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: US6
Part Status: Active
Description: NPN + NPN IND. TRANSISTOR VCEO20
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 2906 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.99 EUR |
36+ | 0.73 EUR |
100+ | 0.41 EUR |
500+ | 0.27 EUR |
1000+ | 0.21 EUR |
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Technische Details HN1C03FU-B,LF Toshiba Semiconductor and Storage
Description: NPN + NPN IND. TRANSISTOR VCEO20, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: 150°C (TJ), Power - Max: 200mW, Current - Collector (Ic) (Max): 300mA, Voltage - Collector Emitter Breakdown (Max): 20V, Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V, Frequency - Transition: 30MHz, Supplier Device Package: US6, Part Status: Active.
Weitere Produktangebote HN1C03FU-B,LF nach Preis ab 0.28 EUR bis 0.99 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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HN1C03FU-B,LF | Hersteller : Toshiba | Bipolar Transistors - BJT NPN + NPN Ind. Transistor, VCEO=20V, IC=0.3A, hFE=350 to 1200 in SOT-26 (SM6) package |
auf Bestellung 14510 Stücke: Lieferzeit 14-28 Tag (e) |
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HN1C03FU-B,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: NPN + NPN IND. TRANSISTOR VCEO20 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 200mW Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V Frequency - Transition: 30MHz Supplier Device Package: US6 Part Status: Active |
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