HN1D01FE(TE85L,F)

HN1D01FE(TE85L,F) Toshiba Semiconductor and Storage


HN1D01FE_datasheet_en_20140301.pdf?did=22427&prodName=HN1D01FE Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: ES6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 1180 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
34+ 0.52 EUR
100+ 0.26 EUR
500+ 0.21 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 24
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Technische Details HN1D01FE(TE85L,F) Toshiba Semiconductor and Storage

Description: DIODE ARRAY GP 80V 100MA ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 1.6 ns, Technology: Standard, Diode Configuration: 2 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 100mA, Supplier Device Package: ES6, Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Current - Reverse Leakage @ Vr: 500 nA @ 80 V.

Weitere Produktangebote HN1D01FE(TE85L,F)

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
HN1D01FE(TE85L,F) HN1D01FE(TE85L,F) Hersteller : Toshiba Semiconductor and Storage HN1D01FE_datasheet_en_20140301.pdf?did=22427&prodName=HN1D01FE Description: DIODE ARRAY GP 80V 100MA ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: ES6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
HN1D01FE(TE85L,F) HN1D01FE(TE85L,F) Hersteller : Toshiba HN1D01FE_datasheet_en_20140301-907350.pdf Diodes - General Purpose, Power, Switching Switching diode, 80V ES6 0.1A High Speed
Produkt ist nicht verfügbar