Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > HN1D01FU,LF(T
HN1D01FU,LF(T

HN1D01FU,LF(T Toshiba Semiconductor and Storage

HN1D01FU_datasheet_en_20210625.pdf?did=3447&prodName=HN1D01FU
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+0.69 EUR
44+0.48 EUR
100+0.24 EUR
Mindestbestellmenge: 31 Stücke
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Technische Details HN1D01FU,LF(T Toshiba Semiconductor and Storage

Description: DIODE ARRAY GP 80V 100MA US6, Current - Reverse Leakage @ Vr: 500 nA @ 80 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Voltage - DC Reverse (Vr) (Max): 80 V, Operating Temperature - Junction: 125°C (Max), Supplier Device Package: US6, Current - Average Rectified (Io) (per Diode): 100mA, Diode Configuration: 2 Pair Common Anode, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).

Weitere Produktangebote HN1D01FU,LF(T

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
HN1D01FU,LF(T HN1D01FU,LF(T Toshiba Semiconductor and Storage HN1D01FU_datasheet_en_20210625.pdf?did=3447&prodName=HN1D01FU Description: DIODE ARRAY GP 80V 100MA US6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: US6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1D01FU,LF(T HN1D01FU,LF(T Toshiba HN1D01FU_datasheet_en_20210625-907391.pdf Small Signal Switching Diodes High Speed Switching Diode
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1D01FU,LF(T HN1D01FU_datasheet_en_20210625.pdf?did=3447&prodName=HN1D01FU
HN1D01FU,LF(T
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA US6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: US6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1D01FU,LF(T HN1D01FU_datasheet_en_20210625-907391.pdf
HN1D01FU,LF(T
Hersteller: Toshiba
Small Signal Switching Diodes High Speed Switching Diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH