HN1D02FU,LF

HN1D02FU,LF Toshiba Semiconductor and Storage


HN1D02FU_datasheet_en_20210625.pdf?did=3455&prodName=HN1D02FU Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.13 EUR
Mindestbestellmenge: 3000
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Technische Details HN1D02FU,LF Toshiba Semiconductor and Storage

Description: DIODE ARRAY GP 80V 100MA US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Diode Configuration: 2 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 100mA, Supplier Device Package: US6, Operating Temperature - Junction: 125°C (Max), Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Current - Reverse Leakage @ Vr: 500 nA @ 80 V.

Weitere Produktangebote HN1D02FU,LF nach Preis ab 0.15 EUR bis 1.04 EUR

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Preis ohne MwSt
HN1D02FU,LF HN1D02FU,LF Hersteller : Toshiba Semiconductor and Storage HN1D02FU_datasheet_en_20210625.pdf?did=3455&prodName=HN1D02FU Description: DIODE ARRAY GP 80V 100MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 3005 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
37+ 0.49 EUR
100+ 0.25 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 26
HN1D02FU,LF HN1D02FU,LF Hersteller : Toshiba HN1D02FU_datasheet_en_20210625-1916502.pdf Diodes - General Purpose, Power, Switching US6-M8,
auf Bestellung 3594 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
50+1.04 EUR
66+ 0.8 EUR
148+ 0.35 EUR
1000+ 0.23 EUR
3000+ 0.19 EUR
9000+ 0.16 EUR
24000+ 0.15 EUR
Mindestbestellmenge: 50