HN2D01JE(TE85L,F) Toshiba
| Anzahl | Privatkunde |
|---|---|
| 644+ | 0.27 EUR |
| 720+ | 0.24 EUR |
| 1000+ | 0.23 EUR |
| 2000+ | 0.21 EUR |
Produktrezensionen
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Technische Details HN2D01JE(TE85L,F) Toshiba
Description: DIODE ARRAY GP 80V 100MA ESV, Current - Reverse Leakage @ Vr: 500 nA @ 80 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Voltage - DC Reverse (Vr) (Max): 80 V, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: ESV, Current - Average Rectified (Io) (per Diode): 100mA, Diode Configuration: 2 Independent, Technology: Standard, Reverse Recovery Time (trr): 1.6 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: SOT-553, Packaging: Tape & Reel (TR).
Weitere Produktangebote HN2D01JE(TE85L,F) nach Preis ab 0.14 EUR bis 0.77 EUR
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HN2D01JE(TE85L,F) | Toshiba |
 Diodes - General Purpose, Power, Switching Switching Diode 2 Circuit 0.1A 80V |
auf Bestellung 7016 Stücke: Lieferzeit 10-14 Tag (e) |
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HN2D01JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA ESV Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.6 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: ESV Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
auf Bestellung 492 Stücke: Lieferzeit 10-14 Tag (e) |
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| HN2D01JE(TE85L,F) |
|
Hersteller: Toshiba
Diodes - General Purpose, Power, Switching Switching Diode 2 Circuit 0.1A 80V
Diodes - General Purpose, Power, Switching Switching Diode 2 Circuit 0.1A 80V
auf Bestellung 7016 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.77 EUR |
| 10+ | 0.56 EUR |
| 100+ | 0.25 EUR |
| 1000+ | 0.18 EUR |
| 4000+ | 0.17 EUR |
| 8000+ | 0.14 EUR |
| HN2D01JE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: ESV
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: ESV
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 492 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.77 EUR |
| 39+ | 0.54 EUR |
| 100+ | 0.27 EUR |