HN2D01JE(TE85L,F) Toshiba
auf Bestellung 3800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 644+ | 0.24 EUR |
| 720+ | 0.21 EUR |
| 1000+ | 0.19 EUR |
| 2000+ | 0.18 EUR |
Produktrezensionen
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Technische Details HN2D01JE(TE85L,F) Toshiba
Description: DIODE ARRAY GP 80V 100MA ESV, Packaging: Tape & Reel (TR), Package / Case: SOT-553, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 1.6 ns, Technology: Standard, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 100mA, Supplier Device Package: ESV, Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Current - Reverse Leakage @ Vr: 500 nA @ 80 V.
Weitere Produktangebote HN2D01JE(TE85L,F) nach Preis ab 0.18 EUR bis 0.97 EUR
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HN2D01JE(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA ESV Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.6 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: ESV Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
auf Bestellung 592 Stücke: Lieferzeit 21-28 Tag (e) |
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HN2D01JE(TE85L,F) | Hersteller : Toshiba |
 Diodes - General Purpose, Power, Switching Switching Diode 2 Circuit 0.1A 80V |
auf Bestellung 7016 Stücke: Lieferzeit 14-28 Tag (e) |
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HN2D01JE(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA ESV Packaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.6 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: ESV Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
Produkt ist nicht verfügbar |