HN2D02FU,LF

HN2D02FU,LF Toshiba Semiconductor and Storage


HN2D02FU_datasheet_en_20210625.pdf?did=3683&prodName=HN2D02FU Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 3045 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
41+0.44 EUR
100+0.22 EUR
500+0.2 EUR
1000+0.15 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details HN2D02FU,LF Toshiba Semiconductor and Storage

Description: DIODE ARRAY GP 80V 80MA US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Diode Configuration: 3 Independent, Current - Average Rectified (Io) (per Diode): 80mA, Supplier Device Package: US6, Operating Temperature - Junction: 125°C (Max), Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Current - Reverse Leakage @ Vr: 500 nA @ 80 V.

Weitere Produktangebote HN2D02FU,LF

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
HN2D02FU,LF HN2D02FU,LF Hersteller : Toshiba Semiconductor and Storage HN2D02FU_datasheet_en_20210625.pdf?did=3683&prodName=HN2D02FU Description: DIODE ARRAY GP 80V 80MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH