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HN4A06J(TE85L,F)

HN4A06J(TE85L,F) Toshiba

887385BCE050520C62E270B9B899595363FAC6A102BEAF27044114784B4A70BF.pdf
Hersteller: Toshiba
Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A
auf Bestellung 16004 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+0.99 EUR
10+0.61 EUR
100+0.39 EUR
500+0.3 EUR
1000+0.26 EUR
3000+0.23 EUR
6000+0.2 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details HN4A06J(TE85L,F) Toshiba

Description: TRANS 2PNP 120V 100MA SMV, Packaging: Tape & Reel (TR), Package / Case: SC-74A, SOT-753, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter, Operating Temperature: 150°C (TJ), Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 120V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Frequency - Transition: 100MHz, Supplier Device Package: SMV.

Weitere Produktangebote HN4A06J(TE85L,F)

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
HN4A06J(TE85L,F) HN4A06J(TE85L,F) Toshiba Semiconductor and Storage HN4A06J.pdf Description: TRANS 2PNP 120V 100MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SMV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HN4A06J(TE85L,F) HN4A06J(TE85L,F) Toshiba Semiconductor and Storage HN4A06J.pdf Description: TRANS 2PNP 120V 100MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SMV
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN4A06J(TE85L,F) HN4A06J.pdf
HN4A06J(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 120V 100MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SMV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HN4A06J(TE85L,F) HN4A06J.pdf
HN4A06J(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 120V 100MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SMV
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH