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HN4B01JE(TE85L,F) Toshiba


HN4B01JE_datasheet_en_20140301.pdf?did=22310&prodName=HN4B01JE
Hersteller: Toshiba
Bipolar Transistors - BJT Vceo=-50V Vceo=50V
auf Bestellung 3839 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+0.63 EUR
10+0.39 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.17 EUR
2000+0.14 EUR
Mindestbestellmenge: 6 Stücke
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Technische Details HN4B01JE(TE85L,F) Toshiba

Description: TRANS NPN/PNP 50V 0.15A ESV PLN, Supplier Device Package: ESV, Frequency - Transition: 80MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 150mA, Power - Max: 100mW, Operating Temperature: 150°C (TJ), Transistor Type: 1 NPN, 1 PNP (Emitter Coupled), Mounting Type: Surface Mount, Package / Case: SOT-553, Packaging: Tape & Reel (TR).

Weitere Produktangebote HN4B01JE(TE85L,F) nach Preis ab 0.14 EUR bis 0.63 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
HN4B01JE(TE85L,F) HN4B01JE(TE85L,F) Toshiba Semiconductor and Storage HN4B01JE_datasheet_en_20140301.pdf?did=22310&prodName=HN4B01JE Description: TRANS NPN/PNP 50V 0.15A ESV PLN
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ESV
auf Bestellung 3418 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.63 EUR
55+0.39 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.15 EUR
2000+0.14 EUR
Mindestbestellmenge: 34 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN4B01JE(TE85L,F) HN4B01JE_datasheet_en_20140301.pdf?did=22310&prodName=HN4B01JE
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A ESV PLN
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ESV
auf Bestellung 3418 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
55+0.39 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.15 EUR
2000+0.14 EUR
Mindestbestellmenge: 34 Stücke
Im Einkaufswagen  Stück im Wert von  UAH