HP8JB5TB1 ROHM Semiconductor
Hersteller: ROHM Semiconductor
MOSFETs Transistor, Discrete Semiconductors, MOSFETs, -40V 18A, Dual Pch+Pch, HSOP8, Power MOSFET
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.8 EUR |
| 10+ | 1.83 EUR |
| 100+ | 1.64 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.25 EUR |
| 2500+ | 1.12 EUR |
| 5000+ | 1.07 EUR |
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Lieferzeit:
10-14 Tag (e)
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Technische Details HP8JB5TB1 ROHM Semiconductor
Description: -40V 18A, DUAL PCH+PCH, HSOP8, P, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), 21W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V, Rds On (Max) @ Id, Vgs: 44mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP.
Weitere Produktangebote HP8JB5TB1 nach Preis ab 1.34 EUR bis 3.92 EUR
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HP8JB5TB1 | Rohm Semiconductor |
Description: -40V 18A, DUAL PCH+PCH, HSOP8, P Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 21W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V Rds On (Max) @ Id, Vgs: 44mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP |
auf Bestellung 2487 Stücke: Lieferzeit 10-14 Tag (e) |
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| HP8JB5TB1 |
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Hersteller: Rohm Semiconductor
Description: -40V 18A, DUAL PCH+PCH, HSOP8, P
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V
Rds On (Max) @ Id, Vgs: 44mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Description: -40V 18A, DUAL PCH+PCH, HSOP8, P
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V
Rds On (Max) @ Id, Vgs: 44mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2487 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.92 EUR |
| 10+ | 2.51 EUR |
| 50+ | 1.89 EUR |
| 100+ | 1.69 EUR |
| 500+ | 1.34 EUR |