HP8JC5TB1

HP8JC5TB1 Rohm Semiconductor


hp8jc5tb1-e.pdf Hersteller: Rohm Semiconductor
Description: -60V 14.5A, DUAL PCH+PCH, HSOP8,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 14.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 89mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.84 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
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Technische Details HP8JC5TB1 Rohm Semiconductor

Description: -60V 14.5A, DUAL PCH+PCH, HSOP8,, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), 21W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 14.5A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V, Rds On (Max) @ Id, Vgs: 89mOhm @ 5.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP.

Weitere Produktangebote HP8JC5TB1 nach Preis ab 0.95 EUR bis 2.96 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
HP8JC5TB1 HP8JC5TB1 Hersteller : Rohm Semiconductor hp8jc5tb1-e.pdf Description: -60V 14.5A, DUAL PCH+PCH, HSOP8,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 14.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Rds On (Max) @ Id, Vgs: 89mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.96 EUR
10+1.89 EUR
100+1.27 EUR
500+1.01 EUR
1000+0.95 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
HP8JC5TB1 HP8JC5TB1 Hersteller : Rohm Semiconductor hp8jc5tb1e.pdf Trans MOSFET P-CH 60V 5.5A 8-Pin HSOP EP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HP8JC5TB1 HP8JC5TB1 Hersteller : ROHM Semiconductor hp8jc5tb1-e.pdf MOSFETs Discrete Semiconductors, MOSFETs, -60V 14.5A, Dual Pch+Pch, HSOP8, Power MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH