HP8KA1TB Rohm Semiconductor
auf Bestellung 1165 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 152+ | 1.49 EUR |
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Technische Details HP8KA1TB Rohm Semiconductor
Description: MOSFET 2N-CH 30V 14A 8HSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 14A, Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V, Rds On (Max) @ Id, Vgs: 5mOhm @ 14A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 10mA, Supplier Device Package: 8-HSOP.
Weitere Produktangebote HP8KA1TB nach Preis ab 0.76 EUR bis 2.85 EUR
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HP8KA1TB | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH 30V 14A 8-Pin HSOP EP T/R |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8KA1TB | Hersteller : ROHM Semiconductor |
MOSFETs HSOP8 N CHAN 30V |
auf Bestellung 1479 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8KA1TB | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 14A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 14A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 10mA Supplier Device Package: 8-HSOP |
auf Bestellung 2495 Stücke: Lieferzeit 10-14 Tag (e) |
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| HP8KA1TB | Hersteller : ROHM SEMICONDUCTOR |
HP8KA1TB Multi channel transistors |
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HP8KA1TB | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 14A 8HSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 14A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 10mA Supplier Device Package: 8-HSOP |
Produkt ist nicht verfügbar |