Technische Details HP8KA1TB Rohm Semiconductor
Description: MOSFET 2N-CH 30V 14A 8HSOP, Supplier Device Package: 8-HSOP, Vgs(th) (Max) @ Id: 2.5V @ 10mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V, Rds On (Max) @ Id, Vgs: 5mOhm @ 14A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 14A, Drain to Source Voltage (Vdss): 30V, Power - Max: 3W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote HP8KA1TB nach Preis ab 0.82 EUR bis 3.19 EUR
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HP8KA1TB | Rohm Semiconductor |
 Trans MOSFET N-CH 30V 14A 8-Pin HSOP EP T/R |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8KA1TB | ROHM Semiconductor |
MOSFETs HSOP8 2NCH 30V 14A |
auf Bestellung 1378 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8KA1TB | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 14A 8HSOP Supplier Device Package: 8-HSOP Vgs(th) (Max) @ Id: 2.5V @ 10mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Rds On (Max) @ Id, Vgs: 5mOhm @ 14A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V Current - Continuous Drain (Id) @ 25°C: 14A Drain to Source Voltage (Vdss): 30V Power - Max: 3W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 2495 Stücke: Lieferzeit 10-14 Tag (e) |
|
| HP8KA1TB |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 30V 14A 8-Pin HSOP EP T/R
Trans MOSFET N-CH 30V 14A 8-Pin HSOP EP T/R
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 78+ | 2.25 EUR |
| 102+ | 1.69 EUR |
| 200+ | 1.51 EUR |
| 500+ | 1.11 EUR |
| HP8KA1TB |
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Hersteller: ROHM Semiconductor
MOSFETs HSOP8 2NCH 30V 14A
MOSFETs HSOP8 2NCH 30V 14A
auf Bestellung 1378 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.17 EUR |
| 10+ | 2.01 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.98 EUR |
| 2500+ | 0.87 EUR |
| 5000+ | 0.82 EUR |
| HP8KA1TB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 14A 8HSOP
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 10mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Rds On (Max) @ Id, Vgs: 5mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 14A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 14A 8HSOP
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 10mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Rds On (Max) @ Id, Vgs: 5mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 14A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 2495 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.19 EUR |
| 11+ | 2.01 EUR |
| 100+ | 1.36 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 0.98 EUR |