HP8KA1TB Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 152+ | 1.8 EUR |
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14-21 Tag (e)
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152 Stücke
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Technische Details HP8KA1TB Rohm Semiconductor
Description: MOSFET 2N-CH 30V 14A 8HSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 14A, Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V, Rds On (Max) @ Id, Vgs: 5mOhm @ 14A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 10mA, Supplier Device Package: 8-HSOP.
Weitere Produktangebote HP8KA1TB nach Preis ab 0.82 EUR bis 3.44 EUR
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HP8KA1TB | Rohm Semiconductor |
 Trans MOSFET N-CH 30V 14A 8-Pin HSOP EP T/R |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8KA1TB | ROHM Semiconductor |
MOSFETs HSOP8 2NCH 30V 14A |
auf Bestellung 1378 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8KA1TB | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 14A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 14A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 10mA Supplier Device Package: 8-HSOP |
auf Bestellung 1995 Stücke: Lieferzeit 10-14 Tag (e) |
|
| HP8KA1TB |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 30V 14A 8-Pin HSOP EP T/R
Trans MOSFET N-CH 30V 14A 8-Pin HSOP EP T/R
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 78+ | 2.3 EUR |
| 102+ | 1.74 EUR |
| 200+ | 1.55 EUR |
| 500+ | 1.13 EUR |
| HP8KA1TB |
|
Hersteller: ROHM Semiconductor
MOSFETs HSOP8 2NCH 30V 14A
MOSFETs HSOP8 2NCH 30V 14A
auf Bestellung 1378 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.17 EUR |
| 10+ | 2.01 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.98 EUR |
| 2500+ | 0.87 EUR |
| 5000+ | 0.82 EUR |
| HP8KA1TB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 14A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A
Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 10mA
Supplier Device Package: 8-HSOP
Description: MOSFET 2N-CH 30V 14A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A
Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 10mA
Supplier Device Package: 8-HSOP
auf Bestellung 1995 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.44 EUR |
| 10+ | 2.19 EUR |
| 50+ | 1.64 EUR |
| 100+ | 1.46 EUR |
| 500+ | 1.15 EUR |