HP8KB6TB1

HP8KB6TB1 Rohm Semiconductor


datasheet?p=HP8KB6&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Hersteller: Rohm Semiconductor
Description: 40V 24A, DUAL NCH+NCH, HSOP8, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 10.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.13 EUR
Mindestbestellmenge: 2500
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Technische Details HP8KB6TB1 Rohm Semiconductor

Description: 40V 24A, DUAL NCH+NCH, HSOP8, PO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), 21W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 24A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V, Rds On (Max) @ Id, Vgs: 15.7mOhm @ 10.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP.

Weitere Produktangebote HP8KB6TB1 nach Preis ab 1.21 EUR bis 4 EUR

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Preis ohne MwSt
HP8KB6TB1 HP8KB6TB1 Hersteller : Rohm Semiconductor datasheet?p=HP8KB6&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 40V 24A, DUAL NCH+NCH, HSOP8, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 10.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.68 EUR
10+ 2.39 EUR
25+ 2.27 EUR
100+ 1.86 EUR
250+ 1.74 EUR
500+ 1.54 EUR
1000+ 1.21 EUR
Mindestbestellmenge: 7
HP8KB6TB1 HP8KB6TB1 Hersteller : ROHM Semiconductor datasheet?p=HP8KB6&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key MOSFET 40V 24A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KB6 is a low on-resistance MOSFET ideal for switching applications.
auf Bestellung 5000 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
13+4 EUR
16+ 3.28 EUR
100+ 2.56 EUR
500+ 2.17 EUR
1000+ 1.91 EUR
2500+ 1.62 EUR
5000+ 1.58 EUR
Mindestbestellmenge: 13
HP8KB6TB1 Hersteller : Rohm Semiconductor hp8kb6tb1-e.pdf Trans MOSFET N-CH 40V 10.5A 8-Pin HSOP EP T/R
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
100+1.61 EUR
Mindestbestellmenge: 100
HP8KB6TB1 Hersteller : Rohm Semiconductor hp8kb6tb1-e.pdf Trans MOSFET N-CH 40V 10.5A 8-Pin HSOP EP T/R
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
97+1.62 EUR
Mindestbestellmenge: 97