HP8KC5TB1

HP8KC5TB1 Rohm Semiconductor


Hersteller: Rohm Semiconductor
Description: 60V 12A, DUAL NCH+NCH, HSOP8, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 20W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 90mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2495 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.10 EUR
10+1.97 EUR
100+1.33 EUR
500+1.05 EUR
1000+0.97 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details HP8KC5TB1 Rohm Semiconductor

Description: 60V 12A, DUAL NCH+NCH, HSOP8, PO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), 20W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, Rds On (Max) @ Id, Vgs: 90mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP.

Weitere Produktangebote HP8KC5TB1 nach Preis ab 0.79 EUR bis 1.33 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
HP8KC5TB1 Hersteller : Rohm Semiconductor hp8kc5tb1-e.pdf Trans MOSFET N-CH 60V 4.5A 8-Pin HSOP EP
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
111+1.33 EUR
149+0.96 EUR
200+0.79 EUR
Mindestbestellmenge: 111
Im Einkaufswagen  Stück im Wert von  UAH
HP8KC5TB1 Hersteller : Rohm Semiconductor hp8kc5tb1-e.pdf Trans MOSFET N-CH 60V 4.5A 8-Pin HSOP EP
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
HP8KC5TB1 HP8KC5TB1 Hersteller : Rohm Semiconductor Description: 60V 12A, DUAL NCH+NCH, HSOP8, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 20W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 90mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HP8KC5TB1 HP8KC5TB1 Hersteller : ROHM Semiconductor MOSFETs HS0P8 N CHAN 60V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH